Hahn, B. and Heindel, G. and Pschorr-Schoberer, E. and Gebhardt, Wolfgang (1998) MOCVD layer growth of ZnO using DMZn and tertiary butanol. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 13 (7). pp. 788-791. ISSN 0268-1242, 1361-6641
Full text not available from this repository.Abstract
Highly conductive polycrystalline ZnO films have been grown by metal organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn), dimethylzinc-triethylamine (DMZn-TEN) and tertiary butanol (tBuOH) as precursors. When (DMZn-TEN) is used the efficiency of the zinc precursors is reduced by the formation of gas-phase adducts. Films grown by DMZn-TEN are oriented with the c axis in the growth direction. The films are transparent. Specific resistivities as low as 3 x 10(-4) Omega cm and Hall mobilities up to 60 cm(2) (V s)(-1) have been achieved in n-doped films where n-butylchloride and triethylgallium have been used as dopant sources.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | OXIDE THIN-FILMS |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Feb 2023 08:27 |
| Last Modified: | 21 Feb 2023 08:27 |
| URI: | https://pred.uni-regensburg.de/id/eprint/49721 |
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