Dyakonova, N. and But, D. B. and Coquillat, D. and Knap, W. and Drexler, C. and Olbrich, P. and Karch, J. and Schafberger, M. and Ganichev, S. D. and Ducournau, G. and Gaquiere, C. and Poisson, M. -A. and Delage, S. and Cywinski, G. and Skierbiszewski, C. (2015) AlGaN/GaN HEMT's photoresponse to high intensity THz radiation. OPTO-ELECTRONICS REVIEW, 23 (3). pp. 195-199. ISSN 1230-3402, 1896-3757
Full text not available from this repository. (Request a copy)Abstract
We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm(2). The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FIELD-EFFECT TRANSISTORS; TERAHERTZ RADIATION; terahertz; photoresponse; HEMT; ALGaN/GaN |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Jun 2019 08:08 |
| Last Modified: | 14 Jun 2019 08:08 |
| URI: | https://pred.uni-regensburg.de/id/eprint/4985 |
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