Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxy

Guan, Z. P. and Kuang, G. K. and Griebl, E. and Kastner, M. and Gebhardt, Wolfgang (1998) Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxy. APPLIED PHYSICS LETTERS, 72 (14). pp. 1688-1690. ISSN 0003-6951, 1077-3118

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Abstract

A group of well-defined exciton transitions from the localized states were observed in ZnSe-Zn0.75Cd0.25Se double-superlattice structure. The photoluminescence and photoreflectance have been employed to study the subband transitions at low temperatures. At 1.4 K, except the two ground states and two higher subbands of n=1 light-hole and n=2 heavy-hole excitonic transitions, other four peaks (A, B, C, and D) also were observed in wider-well superlattice, Those peaks were attributed to the excitonic transitions from n=2 heavy-hole subband due to the fluctuation of well-barrier interface. Another localized excitonic transition from narrower-well superlattice appeared as increasing the modulated intensity in photoreflectance spectra. (C) 1998 American Institute of Physics. [S0003-6951(98)02614-X].

Item Type: Article
Uncontrolled Keywords: QUANTUM-WELLS; EPILAYERS
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 24 Feb 2023 11:06
Last Modified: 24 Feb 2023 11:06
URI: https://pred.uni-regensburg.de/id/eprint/49942

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