Ganichev, Sergey D. and Ziemann, E. and Gleim, Th. and Prettl, Wilhelm and Yassievich, I. N. and Perel, V. I. and Wilke, I. and Haller, E. E. (1998) Carrier tunneling in high-frequency electric fields. PHYSICAL REVIEW LETTERS, 80 (11). pp. 2409-2412. ISSN 0031-9007, 1079-7114
Full text not available from this repository.Abstract
An enhancement of tunnel ionization of deep impurities in semiconductors in an alternating held as compared to static fields has been observed. The transition between the quasistatic and the high-frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure. A theory of tunnel ionization of deep impurities by high-frequency fields has been developed.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FAR-INFRARED RADIATION; DEEP IMPURITIES; IONIZATION; TIME |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 28 Feb 2023 06:31 |
| Last Modified: | 28 Feb 2023 06:31 |
| URI: | https://pred.uni-regensburg.de/id/eprint/50018 |
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