Kuhn, W. S. and Angermeier, D. and Druilhe, R. and Gebhardt, Wolfgang and Triboulet, R. (1998) Analysis of the CVD in a horizontal reactor - I. The epitaxy of Ge. JOURNAL OF CRYSTAL GROWTH, 183 (4). pp. 525-534. ISSN 0022-0248, 1873-5002
Full text not available from this repository.Abstract
We studied the growth of Ge on (1 0 0)Si substrates in a horizontal quartz reactor. GeH4 was employed as precursor in 1 atm H-2 carrier gas. The growth rates and the surface morphology were investigated under various growth conditions. Deposition uniformity and interface conditions were analysed by numerical and analytical simulations. Kinetic and mass transport limitation of the growth rate and particle formation are discussed in detail. Conclusions are drawn for further improvement of Ge epitaxy. (C) 1998 Elsevier Science B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GROWTH; SI |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 28 Feb 2023 09:47 |
| Last Modified: | 28 Feb 2023 09:47 |
| URI: | https://pred.uni-regensburg.de/id/eprint/50120 |
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