Kuhn, W. S. and Angermeier, D. and Druilhe, R. and Gebhardt, Wolfgang and Triboulet, R. (1998) Analysis of the CVD in a horizontal reactor - II. The epitaxy of CdTe. JOURNAL OF CRYSTAL GROWTH, 183 (4). pp. 535-544. ISSN 0022-0248, 1873-5002
Full text not available from this repository.Abstract
We studied the growth of CdTe on (1 0 0)Si substrates covered with a ZnTe/Ge buffer layer. The growth was performed in a horizontal quartz reactor and dimethylcadmium and diisopropyltelluride were employed as precursors in 1 atm H-2 carrier gas, We investigated the growth rates and the surface morphology under various growth conditions. Deposition uniformity and interface conditions were analysed by numerical and analytical simulations. Kinetic and mass-transport limitation of the growth rate, gas-phase stoichiometry, and gas-phase supersaturation are discussed in detail. The complex relationships in the growth of CdTe render impossible a simple interpretation of growth results. (C) 1998 Elsevier Science B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | VAPOR-PHASE EPITAXY; KINETICS; GROWTH; DEPOSITION; ZNTE |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 28 Feb 2023 09:49 |
| Last Modified: | 28 Feb 2023 09:49 |
| URI: | https://pred.uni-regensburg.de/id/eprint/50121 |
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