Liu, Bilu and Koepf, Marianne and Abbas, Ahmad N. and Wang, Xiaomu and Guo, Qiushi and Jia, Yichen and Xia, Fengnian and Weihrich, Richard and Bachhuber, Frederik and Pielnhofer, Florian and Wang, Han and Dhall, Rohan and Cronin, Stephen B. and Ge, Mingyuan and Fang, Xin and Nilges, Tom and Zhou, Chongwu (2015) Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties. ADVANCED MATERIALS, 27 (30). pp. 4423-4429. ISSN 0935-9648, 1521-4095
Full text not available from this repository. (Request a copy)Abstract
New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; MOLYBDENUM-DISULFIDE; MOS2 TRANSISTORS; GROWTH; GRAPHENE; PHASE; OPTOELECTRONICS; ELECTRONICS; TRANSITION; anisotropic; band gaps; black arsenic; black phosphorus; infrared semiconductors; layered materials |
| Subjects: | 500 Science > 540 Chemistry & allied sciences |
| Divisions: | Chemistry and Pharmacy > Institut für Anorganische Chemie > Arbeitskreis Dr. Richard Weihrich |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Jun 2019 11:42 |
| Last Modified: | 14 Jun 2019 11:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/5026 |
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