Current oscillations in n-doped GaAs/AlAs superlattice devices due to traveling field domains

Blomeier, T. and Schomburg, W. E. and Hofbeck, K. and Grenzer, J. and Brandl, S. and Lingott, I. and Ignatov, A. A. and Renk, Karl F. and Pavelev, D. G. and Koschurinov, Y. and Melzer, B. and Ustinov, V. and Ivanov, S. and Kopev, P. S. (1997) Current oscillations in n-doped GaAs/AlAs superlattice devices due to traveling field domains. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 204 (1). pp. 485-488. ISSN 0370-1972, 1521-3951

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Abstract

We report on a self-sustained high-frequency (HF) current oscillation (at a frequency of 9 GHz) in a doped wide-miniband GaAs/A1As superlattice with negative differential conductance. An analysis of the current transport, malting use of the continuity equation and Poisson equation indicates that the oscillation is due to propagating dipole domains.

Item Type: Article
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Karl F. Renk
Depositing User: Dr. Gernot Deinzer
Date Deposited: 28 Mar 2023 06:12
Last Modified: 28 Mar 2023 06:12
URI: https://pred.uni-regensburg.de/id/eprint/50459

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