Hahn, Berthold and Preis, H. and Schindler, M. and Reisinger, T. and Gebhardt, Wolfgang (1997) Role of nitrogen precursors in MOVPE growth of ZnSe. JOURNAL OF CRYSTAL GROWTH, 179 (3-4). pp. 415-422. ISSN 0022-0248, 1873-5002
Full text not available from this repository.Abstract
Two amines, Et3N and (BuNH2)-Bu-t have been investigated in their role to improve the quality of MOVPE-grown ZnSe layers. A reduction of growth rate is observed in the kinetic limited range, which is shown to be due to an increase of activation energy, independent of the amine used. An improvement of the layer quality is related to the suppression of nonradiative recombination centers. However, 2D growth, controlled by ex situ RHEED and MBE-regrowth experiments, was only observed without Et3N. Under photoirradiation the growth rate increases in the kinetic limited range, where the two amines show remarkable differences. Whereas in this case (BuNH2)-Bu-t leads to a poor optical layer quality, Et3N gives excellent layers at sufficiently high growth rates. The experiments, including RDS growth control, lead to the conclusion that the nitrogen compounds are always adsorbed at Se-terminated surfaces and thus inhibit a quick reaction of Zn and Seen the surface. A model is proposed which describes the presented experiments consistently.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | VAPOR-PHASE EPITAXY; MOVPE; doping; ZnSe; prereactions; photoassisted growth; growth model; surface structure |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 25 Apr 2023 05:42 |
| Last Modified: | 25 Apr 2023 05:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/50672 |
Actions (login required)
 |
View Item |
