Wellenhofer, G. and Rössler, Ulrich (1997) Global band structure and near-band-edge states. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 202 (1). pp. 107-123. ISSN 0370-1972, 1521-3951
Full text not available from this repository.Abstract
The global band structure from ab-initio calculations using DFT-LDA concepts is presented and discussed for 2H, 3C, 4H, 6H, and 15R SiC in view of the different stacking sequences and point lattices of these polytypes. Details of the conduction and valence band structure close to the band edges are described by using k . p models and thermal density-of-states effective masses are calculated.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | AB-INITIO CALCULATIONS; SILICON-CARBIDE; ELECTRONIC-PROPERTIES; SIC POLYTYPES; CYCLOTRON-RESONANCE; EFFECTIVE MASSES; NITROGEN DONORS; SPECIAL POINTS; GROUND-STATE; N-TYPE |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 27 Apr 2023 06:11 |
| Last Modified: | 27 Apr 2023 06:11 |
| URI: | https://pred.uni-regensburg.de/id/eprint/50734 |
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