Olbrich, Alexander and Vancea, Johann and Kreupl, Franz and Hoffmann, Horst (1997) Potential pinch-off effect in inhomogeneous Au/Co/GaAs67P33(100)-Schottky contacts. APPLIED PHYSICS LETTERS, 70 (19). pp. 2559-2561. ISSN 0003-6951, 1077-3118
Full text not available from this repository.Abstract
In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts. (C) 1997 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRON-TRANSPORT; SCHOTTKY BARRIERS |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 27 Apr 2023 09:26 |
| Last Modified: | 27 Apr 2023 09:26 |
| URI: | https://pred.uni-regensburg.de/id/eprint/50824 |
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