Ganichev, S. D. and Raab, W. and Zepezauer, E. and Prettl, Wilhelm and Yassievich, I. N. (1997) Storage of electrons in shallow donor excited states of GaP:Te. PHYSICAL REVIEW B, 55 (15). pp. 9243-9246. ISSN 0163-1829
Full text not available from this repository.Abstract
Tellurium donors in GaP have been ionized by phonon-assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component that follows in time the laser pulse and a slow component that rises after the irradiation has ceased and finally exponentially decays with a strongly temperature-dependent time constant varying from several microseconds to milliseconds. It is shown that this temporal structure of the signal is due to a storage of carriers in the valley-orbit split 1s(E) shallow donor state. Observation of far-infrared to mid-infrared up-conversion demonstrates that the final step of cascade recombination is achieved by radiative transitions.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | IMPURITIES |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 09 May 2023 07:58 |
| Last Modified: | 09 May 2023 07:58 |
| URI: | https://pred.uni-regensburg.de/id/eprint/50880 |
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