Kastner, Marcus J. and Leo, Gabriella and Brunhuber, Doris and Rosenauer, Andreas and Preis, Herbert and Hahn, Berthold and Deufel, Markus and Gebhardt, Wolfgang (1997) Investigations on strain relaxation of ZnSxSe1-x layers grown by metalorganic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH, 172 (1-2). pp. 64-74. ISSN 0022-0248, 1873-5002
Full text not available from this repository.Abstract
We investigated the strain relaxation process of ternary ZnSxSe1-x layers using high-resolution X-ray diffractometry (XRD), Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). The samples were grown by low pressure MOVPE on (001) GaAs substrates. XRD analysis shows that after exceeding a critical layer thickness strain relaxation occurs first in the [1(1) over bar0$] direction and the layer unit cell is monoclinically distorted. A detailed structural characterization and strain measurements for various compositions and layer thicknesses were carried out. TEM and RBS channeling measurements reveal an anisotropic distribution of defects not confined at the interface. Their contribution to the observed strain relaxation will be discussed. It is demonstrated that the introduction of a thin ZnSe layer between substrate and ZnSxSe1-x epilayer will drastically slow down the relaxation process and hamper the formation of stacking faults at the heterointerface.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GREEN LASER-DIODES; MISFIT DISLOCATIONS; STACKING-FAULTS; QUANTUM-WELLS; GAAS; GENERATION; HETEROSTRUCTURES; DEFECTS; DEGRADATION; DEPENDENCE |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 17 May 2023 06:23 |
| Last Modified: | 17 May 2023 06:23 |
| URI: | https://pred.uni-regensburg.de/id/eprint/51066 |
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