Dynamic localization leading to full suppression of the dc current in a GaAs/AlAs superlattice

Winnerl, S. and Schomburg, E. and Grenzer, J. and Regl, H. J. and Ignatov, A. A. and Renk, Karl F. and Pavelev, D. P. and Koschurinov, Y. and Melzer, B. and Ustinov, V. and Ivanov, S. and Schaposchnikov, S. and Kopev, P. S. (1997) Dynamic localization leading to full suppression of the dc current in a GaAs/AlAs superlattice. SUPERLATTICES AND MICROSTRUCTURES, 21 (1). pp. 91-94. ISSN 0749-6036

Full text not available from this repository.

Abstract

We demonstrate that a strong THz-field (3.9 THz) can lead to full supression of the de current through a GaAs/AlAs superlattice that shows, at room temperature, negative differential conductance. The miniband width (Delta = 50 meV) was much larger than the quantum energy of the radiation (16 meV). Using a semi-classical model we show that the miniband electrons do not relax during one period of the THz-field. In this case the reduction of the de current can not be explained in terms of classical rectification caused by the non-linear current-voltage characteristic. Rather it is due to dynamic localization of electrons, performing frequency modulated Bloch oscillations. (C) 1997 Academic Press Limited

Item Type: Article
Uncontrolled Keywords: SEMICONDUCTOR SUPERLATTICE; BLOCH OSCILLATIONS; THZ-FIELD; Bloch oscillations; THz-radiation; dynamic localization
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Karl F. Renk
Depositing User: Dr. Gernot Deinzer
Date Deposited: 25 May 2023 09:34
Last Modified: 25 May 2023 09:34
URI: https://pred.uni-regensburg.de/id/eprint/51254

Actions (login required)

View Item View Item