Salditt, T. and Lott, D. and Metzger, T. H. and Peisl, J. and Fischer, R. and Zweck, Josef and Hoghoj, P. and Schärpf, O. and Vignaud, G. (1996) Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers. EUROPHYSICS LETTERS, 36 (8). pp. 565-570. ISSN 0295-5075
Full text not available from this repository.Abstract
We have investigated the interfacial roughness of a W/Si multilayer sputtered at high Ar gas pressure. The roughness exponents as determined from diffuse X-ray scattering agree well with the Huygens-principle growth model proposed by Tang, Alexander and Bruinsma (TAB). Simple microscopic explanations are given to account for the finding of Edwards-Wilkinson (EW) type growth at low Ar pressure and the TAB growth mechanism at high pressures, as well as for the absence of any scaling according to the Kardar-Parisi-Zhang (KPZ) equation.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | THIN-FILM; SCATTERING; ROUGHNESS |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 25 May 2023 10:47 |
| Last Modified: | 25 May 2023 10:47 |
| URI: | https://pred.uni-regensburg.de/id/eprint/51282 |
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