Engelbrecht, F. and Zeman, J. and Wellenhofer, Gerold and Peppermüller, C. and Helbig, R. and Martinez, G. and Rössler, Ulrich (1996) Pressure dependence of the electronic band gap in 6H-SiC. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 198 (1). pp. 81-86. ISSN 0370-1972, 1521-3951
Full text not available from this repository.Abstract
Photoluminescence experiments on 6H-SiC doped with nitrogen have been performed at low temperature (T = (29 +/- 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S-O, E(O), P-O, S-O2, and R(O2) emission lines related to the neutral nitrogen donor bound excitons were determined. The pressure coefficient of the indirect gap of 6H-SiC deduced from the P-O line turns out to be +2.0 meV/GPa. Nonrelativistic band structure calculations within the density-functional theory based on the local density approximation are used to calculate the pressure coefficients of the indirect band gaps of the 6H, 4H, and 3C SiC polytypes. The comparison with available experimental data shows good agreement with the theoretical results.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SILICON-CARBIDE; GROWTH; STATE |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Jun 2023 09:50 |
| Last Modified: | 21 Jun 2023 09:50 |
| URI: | https://pred.uni-regensburg.de/id/eprint/51395 |
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