Gaa, M. and Kunz, R. E. and Schöll, E. and Eberle, W. and Hirschinger, J. and Prettl, Wilhelm (1996) Spatial structure of impact-ionization-induced current filaments in n-GaAs films. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 11 (11). pp. 1646-1655. ISSN 0268-1242, 1361-6641
Full text not available from this repository.Abstract
We present theoretical and experimental investigations of current; filaments in thin n-GaAs films in the regime of low-temperature impurity breakdown. Simulations combining a Monte Carlo approach for the scattering and generation-recombination processes with a drift-diffusion model on a two-dimensional spatial domain yield detailed information about the distribution of the electron densities, electron temperature, current density and electric field. The theory is confirmed by spatially resolved measurements using a novel technique of quenched photoluminescence.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | BREATHING CURRENT FILAMENTS; MONTE-CARLO SIMULATION; DELTA-DOPED GAAS; IMPURITY-BREAKDOWN; NONLINEAR DYNAMICS; ELECTRIC-FIELD; MAGNETIC-FIELD; SEMICONDUCTORS; EXCITONS; LAYERS |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Jun 2023 10:02 |
| Last Modified: | 21 Jun 2023 10:02 |
| URI: | https://pred.uni-regensburg.de/id/eprint/51402 |
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