Eberle, Werner and Hirschinger, J. and Margull, U. and Prettl, Wilhelm and Novak, V. and Kostial, H. (1996) Visualization of current filaments in n-GaAs by photoluminescence quenching. APPLIED PHYSICS LETTERS, 68 (23). pp. 3329-3331. ISSN 0003-6951, 1077-3118
Full text not available from this repository.Abstract
Hot electrons in semiconductors are known to quench radiative impurity and exciton recombination photoluminescence. This effect has been applied in a low invasive technique to determine the spatial form of current filaments generated by impurity breakdown in high purity n-GaAs epitaxial layers at low temperatures. Observations on samples with Corbino disc contacts clearly demonstrate symmetry breaking and self-organization by the current filamentation. (C) 1996 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | IMPACT IONIZATION; EXCITONS; FIELD |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Jul 2023 07:51 |
| Last Modified: | 05 Jul 2023 07:51 |
| URI: | https://pred.uni-regensburg.de/id/eprint/51647 |
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