Matos-Abiague, A. and Fabian, J. (2015) Tunneling Anomalous and Spin Hall Effects. PHYSICAL REVIEW LETTERS, 115 (5): 056602. ISSN 0031-9007, 1079-7114
Full text not available from this repository.Abstract
We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SPINTRONICS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Jul 2019 12:06 |
| Last Modified: | 05 Jul 2019 12:06 |
| URI: | https://pred.uni-regensburg.de/id/eprint/5176 |
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