Pressure-dependent dynamical and dielectric properties of cubic SiC

Karch, K. and Bechstedt, F. and Pavone, P. and Strauch, Dieter (1996) Pressure-dependent dynamical and dielectric properties of cubic SiC. JOURNAL OF PHYSICS-CONDENSED MATTER, 8 (17). pp. 2945-2955. ISSN 0953-8984, 1361-648X

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Abstract

The plane-wave pseudopotential approach to the density-functional theory (DFT) in the local-density approximation (LDA) is used for an ab initio calculation of pressure-dependent structural, lattice-dynamical, and dielectric properties of cubic silicon carbide (3C SiC). Whereas the influence of hydrostatic pressure on the structural and the underlying bonding properties is treated within the DFT-LDA, the linear-response theory is applied to describe the pressure dependence of the zone-centre phonon frequencies, the dielectric constant, and the Born effective charge of 3C SiC. Furthermore, the results for 3C SiC are compared with the corresponding ones for silicon and diamond.

Item Type: Article
Uncontrolled Keywords: GROUND-STATE PROPERTIES; SILICON-CARBIDE; RAMAN-SCATTERING; EFFECTIVE CHARGES; PHONON FREQUENCY; BAND-GAPS; III-V; DIAMOND; SOLIDS; SEMICONDUCTORS
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Dieter Strauch
Depositing User: Dr. Gernot Deinzer
Date Deposited: 26 Oct 2023 12:35
Last Modified: 26 Oct 2023 12:35
URI: https://pred.uni-regensburg.de/id/eprint/51769

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