Winkler, R. and Nesvizhskii, A. I. (1996) Anisotropic hole subband states and interband optical absorption in [mmn]-oriented quantum wells. PHYSICAL REVIEW B, 53 (15). pp. 9984-9992. ISSN 1098-0121, 1550-235X
Full text not available from this repository.Abstract
Using a multiband k . p theory, we have analyzed the anisotropic hole subband states and interband optical absorption in [mmn]-oriented GaAs/AlAs quantum wells (QW's). For QW's grown in the [001] and [113] direction, the spacing of hole subbands and the slope of the subband dispersion is considerably larger than that for QW's grown in the [110] direction. Anisotropy of the dispersion is the largest for [110] grown QW's. We calculate the interband optical absorption due to free electron-hole transitions. While basic features of the absorption coefficient alpha(omega) are independent of the growth direction, we find that the in-plane anisotropy of alpha(omega) differs strongly for [110] and [113]. It is opposite in sign for heavy hole and light hole transitions. Our calculations are in good agreement with available experimental data. They indicate that in [113]-oriented GaAs/AlAs structures, the corrugation of the interfaces has a small effect on the optical anisotropy observed experimentally at the fundamental absorption edge.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CONDUCTION-BAND; VALENCE BANDS; GAAS; SUPERLATTICES; TRANSITIONS; SEMICONDUCTORS; PARAMETERS; RESONANCES |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Nov 2023 06:39 |
| Last Modified: | 02 Nov 2023 06:39 |
| URI: | https://pred.uni-regensburg.de/id/eprint/51782 |
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