Nirschl, A. and Binder, M. and Schmid, M. and Karow, M. M. and Pietzonka, I. and Lugauer, H-J and Zeisel, R. and Sabathil, M. and Bougeard, D. and Galler, B. (2015) Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures. JOURNAL OF APPLIED PHYSICS, 118 (3): 033103. ISSN 0021-8979, 1089-7550
Full text not available from this repository. (Request a copy)Abstract
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa) N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the transfer probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the transfer distance to the generating well, and the number of detection wells. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa) N based LEDs. (C) 2015 AIP Publishing LLC.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LIGHT-EMITTING-DIODES; EFFICIENCY DROOP; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Jul 2019 12:55 |
| Last Modified: | 05 Jul 2019 12:55 |
| URI: | https://pred.uni-regensburg.de/id/eprint/5189 |
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