Wetzel, C. and Winkler, R. and Drechsler, M. and Meyer, B. K. and Rössler, Ulrich and Scriba, J. and Kotthaus, J. P. and Härle, V. and Scholz, F. (1996) Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells. PHYSICAL REVIEW B, 53 (3). pp. 1038-1041. ISSN 0163-1829
Full text not available from this repository.Abstract
The in-plane effective electron mass (m(parallel to)) in narrow Ga0.47In0.53As/InP quantum wells is strongly dependent on the quantization energy. Cyclotron resonance in a series of quantum wells with well widths down to 15 Angstrom reveals a mass enhancement of up to 50% (m(parallel to) = 0.065m(0)) over the bulk value of Ga0.47In0.53As. This effect is caused by the nonparabolicity of the conduction band and wave function penetration into the barrier material. Our experimental findings are in good agreement with calculations performed within the framework of k . p theory. We obtain an easy-to-use relation between the mass and the quantization energy m(0)/m(parallel to)(epsilon)=(1 - 1.96 epsilon/eV)/0.044.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | INPLANE EFFECTIVE-MASS; SINGLE-PARTICLE; LANDAU-LEVELS; PHOTOLUMINESCENCE; INP; SEMICONDUCTORS; TRANSPORT; CONFINEMENT; ALLOYS; GAAS |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Nov 2023 10:41 |
| Last Modified: | 14 Nov 2023 10:41 |
| URI: | https://pred.uni-regensburg.de/id/eprint/51995 |
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