Ab initio calculations of structural and electronic properties of 15R SiC

Wellenhofer, G. and Rössler, Ulrich (1995) Ab initio calculations of structural and electronic properties of 15R SiC. SOLID STATE COMMUNICATIONS, 96 (11). pp. 887-891. ISSN 0038-1098, 1879-2766

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Abstract

We report on ab initio calculations of structural and electronic properties for rhombohedral 15R SiC within the density-functional theory in the local density approximation. Besides the structural parameters we present the electronic band dispersion along high-symmetry lines of the irreducible part of the Brillouin zone and compare the position of the lowest conduction-band minimum with those of cubic and hexagonal polytypes. Furthermore we derive from the conduction-band dispersion the components of the effective-mass tensor and compare these with experimental data.

Item Type: Article
Uncontrolled Keywords: SILICON-CARBIDE POLYTYPES; SEMICONDUCTORS; CRYSTAL STRUCTURE AND SYMMETRY; ELECTRONIC BAND STRUCTURE
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
Depositing User: Dr. Gernot Deinzer
Date Deposited: 17 Nov 2023 10:45
Last Modified: 17 Nov 2023 10:45
URI: https://pred.uni-regensburg.de/id/eprint/52198

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