Self-sustained oscillations in undoped a-Si:H

Eberle, W. and Prettl, Wilhelm and Roizin, Y. (1995) Self-sustained oscillations in undoped a-Si:H. JOURNAL OF PHYSICS-CONDENSED MATTER, 7 (42). pp. 8165-8173. ISSN 0953-8984, 1361-648X

Full text not available from this repository.

Abstract

Self-sustained oscillations and fluctuations have been observed in undoped hydrogenated amorphous silicon (a-Si:H) thin films when small portions of the sample were biased using coplanar electrodes. After subjecting the samples to very high voltages several times, the current flow becomes unstable. At constant voltage the current continuously increases ending in the irreversible formation of visible channels between the electrodes which exhibit an almost periodic structure. During this process of pattern formation random fluctuation as well as periodic single-frequency and mode-locked multiple-frequency current oscillations and random telegraph noise have been detected. These phenomena are attributed to microcracks in the sample which change their resistivity by the hopping of hydrogen between different binding configurations.

Item Type: Article
Uncontrolled Keywords: HYDROGENATED AMORPHOUS-SILICON; NOISE; FLUCTUATIONS; FLOW
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Depositing User: Dr. Gernot Deinzer
Date Deposited: 02 Jan 2024 10:23
Last Modified: 02 Jan 2024 10:23
URI: https://pred.uni-regensburg.de/id/eprint/52260

Actions (login required)

View Item View Item