Structure and dynamics of hydrogenated GaAs(110) and InP(110) surfaces

Fritsch, J. and Eckert, A. and Pavone, P. and Schröder, Ulrich (1995) Structure and dynamics of hydrogenated GaAs(110) and InP(110) surfaces. JOURNAL OF PHYSICS-CONDENSED MATTER, 7 (40). pp. 7717-7728. ISSN 0953-8984, 1361-648X

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Abstract

We have investigated the structural and vibrational properties of hydrogen-covered GaAs(110) and InP(110) surfaces in the framework of the density-functional theory. The plane wave pseudopotential method combined with the slab supercell description for the surfaces has been employed to determine the relaxation geometries of H:GaAs(110) and H:InP(110) for the half- and one-monolayer coverages. Our results are in good agreement with all available experimental data. For both surfaces and for all coverages we have determined the surface vibrations by means of an nb initio linear-response formalism. The calculated bond-stretching frequencies compare very well with the results from high-resolution electron-energy-loss spectroscopy. The half-monolayer coverages on InP(110) exhibit vibrational states which are related to the mechanism which leads to the structural decomposition of the surface experimentally observed at high hydrogen exposures.

Item Type: Article
Uncontrolled Keywords: ELECTRONIC-PROPERTIES; ATOMIC-HYDROGEN; CLEAVED INP; ADSORPTION; CHEMISORPTION; PHONONS; SPECTROSCOPY; ENERGY; GAAS; GAP
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 04 Jan 2024 08:44
Last Modified: 04 Jan 2024 08:44
URI: https://pred.uni-regensburg.de/id/eprint/52273

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