Novak, V. and Wimmer, C. and Prettl, Wilhelm (1995) Impurity-breakdown-induced current filamentation in a dipolar electric field. PHYSICAL REVIEW B, 52 (12). pp. 9023-9030. ISSN 0163-1829
Full text not available from this repository.Abstract
Filamentary current how has been investigated in an epitaxial n-type GaAs layer with two Ohmic point contacts. A scanning laser microscope technique has revealed two characteristic regimes of filamentary structure: a large-area filament typical at higher sample currents, and a bendable filament arising at low currents and becoming curved in perpendicular magnetic fields. Self-organization is supposed to be significant upon forming the bendable filament, whereas the large-area filamentary structure is predominantly formed by the electric field distribution due to the point contact geometry. Numerical simulations have been carried out in the second case, showing a good agreement with experimental results.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | N-GAAS; IMPACT IONIZATION; MAGNETIC-FIELD; DYNAMICS; SEMICONDUCTORS; PATTERNS; MODEL |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 16 Jan 2024 06:30 |
| Last Modified: | 16 Jan 2024 06:30 |
| URI: | https://pred.uni-regensburg.de/id/eprint/52318 |
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