GANICHEV, SD and YASSIEVICH, IN and PRETTL, W and DIENER, J and MEYER, BK and BENZ, KW (1995) TUNNELING IONIZATION OF AUTOLOCALIZED DX(-) CENTERS IN TERAHERTZ FIELDS. PHYSICAL REVIEW LETTERS, 75 (8). pp. 1590-1593. ISSN 0031-9007, 1079-7114
Full text not available from this repository.Abstract
Tunneling ionization of DX(-) centers in AlxGa1-xSb has been observed in terahertz radiation fields. Tunneling times have been measured for autolocalized and on-site deep impurities. It is shown that in one case the tunneling time is smaller and in the other larger than the reciprocal temperature multiplied by a universal constant due to the different tunneling trajectories. This allows one to distinguish in a direct way between the two types of configuration potentials of impurities.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | PERSISTENT PHOTOCONDUCTIVITY; SEMICONDUCTORS; ALXGA1-XSB; MODEL; GAAS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:37 |
| URI: | https://pred.uni-regensburg.de/id/eprint/52378 |
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