THZ-FIELD INDUCED NONLINEAR TRANSPORT AND DC VOLTAGE GENERATION IN A SEMICONDUCTOR SUPERLATTICE DUE TO BLOCH OSCILLATIONS

IGNATOV, AA and SCHOMBURG, E and GRENZER, J and RENK, KF and DODIN, EP (1995) THZ-FIELD INDUCED NONLINEAR TRANSPORT AND DC VOLTAGE GENERATION IN A SEMICONDUCTOR SUPERLATTICE DUE TO BLOCH OSCILLATIONS. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 98 (2). pp. 187-195. ISSN 0722-3277,

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Abstract

We report on a theoretical analysis of terahertz (THz-) field induced nonlinear dynamics of electrons in a semiconductor superlattice that are capable to perform Bloch oscillations. Our results suggest that for a strong THz-fieId a de voltage should be generated. We have g e analyzed the real-time dynamics using a balance equation approach to describe the electron transport in a superlattice miniband. Taking account of both Bloch oscillations of electrons in a superlattice miniband and dissipation, we studied the influence of a strong THz-field on currently available superlattices at room temperature. We found that a THz-field can lead to a negative conductance resulting in turn in a THz-field induced de voltage, and that the voltage per superlattice period should show, for varying amplitue of the THz-field, a form of twisted plateaus with the middle points being with high precision equal to the photon energy divided by the electron charge. We show that the THz-field can cause fast switching from the zero-voltage to the finite voltage state, and that in the finite voltage state dynamic localization of the electrons in a miniband occurs.

Item Type: Article
Uncontrolled Keywords: NEGATIVE DIFFERENTIAL CONDUCTANCE; ELECTRIC-FIELD; DYNAMIC LOCALIZATION; PARTICLE; TIME;
Depositing User: Dr. Gernot Deinzer
Last Modified: 19 Oct 2022 08:37
URI: https://pred.uni-regensburg.de/id/eprint/52421

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