KOTELNIKOV, IN and SHULMAN, AY and VARVANIN, NA and GANICHEV, SD and MAYERHOFER, B and PRETT, W (1995) PHOTORESISTIVE EFFECT IN DELTA-DOPED GAAS/METAL TUNNEL-JUNCTIONS. JETP LETTERS, 62 (1). pp. 53-58. ISSN 0021-3640,
Full text not available from this repository.Abstract
An increase of the resistance of a tunnel junction, formed by a two-dimensional electron gas of delta-doped GaAs and a metal him (gate) on a semiconductor surface, was observed under the action of pulsed submillimeter laser radiation. This response is opposite in sign to that expected from heating of two-dimensional electrons by radiation. It was found that the electrons in the delta-layer are heated and this heating is responsible for the positive photoconductivity due to the change in the resistance of the delta-layer itself. A comparison is made with the photoresistive effect in volume-doped tunnel junctions with a Schottky barrier and possible mechanisms of the formation of ponderomotive forces from the field of the electromagnetic wave which influence the tunneling resistance in the case of a two-dimensional electron gas are discussed. (C) 1995 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GAAS QUANTUM WELLS; HOT-ELECTRONS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:37 |
| URI: | https://pred.uni-regensburg.de/id/eprint/52433 |
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