ROSENAUER, A and REISINGER, T and STEINKIRCHNER, E and ZWECK, J and GEBHARDT, W (1995) HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY DETERMINATION OF CD DIFFUSION IN CDSE/ZNSE SINGLE-QUANTUM-WELL STRUCTURES. JOURNAL OF CRYSTAL GROWTH, 152 (1-2). pp. 42-50. ISSN 0022-0248,
Full text not available from this repository.Abstract
The diffusion coefficient D(T) of Cd in CdSe/ZnSe single quantum well (SQW) structures grown pseudomorphically on GaAs(001) is determined by high resolution transmission electron microscopy of annealed SQWs and subsequent digital analysis of lattice images. SQWs of 2 monolayer (ML) thickness were grown by molecular beam epitaxy. During growth the CdSe quantum wells (QWs) broaden to about 7 ML CdZnSe as measured by reflection high energy electron diffraction (RHEED). We find for the diffusion coefficient of Cd in ZnSe at temperatures between 340 and 400 degrees C D(T) = 1.9 x 10(-4) [cm(2)/s]. exp(-1.8 [eV]/kT).
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SURFACES; HREM; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:37 |
| URI: | https://pred.uni-regensburg.de/id/eprint/52500 |
Actions (login required)
 |
View Item |
