CALCULATIONS OF LOCAL AND GAP MODES IN III-V SEMICONDUCTORS BASED ON AB-INITIO DESCRIPTIONS OF THE HOST CRYSTALS

ROBBIE, DA and SANGSTER, MJL and PAVONE, P (1995) CALCULATIONS OF LOCAL AND GAP MODES IN III-V SEMICONDUCTORS BASED ON AB-INITIO DESCRIPTIONS OF THE HOST CRYSTALS. PHYSICAL REVIEW B, 51 (16). pp. 10489-10499. ISSN 0163-1829,

Full text not available from this repository.
Item Type: Article
Uncontrolled Keywords: BOND-CHARGE MODEL; MOLECULAR-BEAM EPITAXY; LATTICE-DYNAMICS; DIAMOND; FREQUENCIES; IMPURITIES; PHONONS; GAAS; ALAS;
Depositing User: Dr. Gernot Deinzer
Last Modified: 19 Oct 2022 08:37
URI: https://pred.uni-regensburg.de/id/eprint/52597

Actions (login required)

View Item View Item