FREYTAG, B (1995) AB-INITIO CALCULATIONS OF THE BAND-OFFSET AT A ZNSE/ZNTE(100) INTERFACE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 10 (3). pp. 270-273. ISSN 0268-1242,
Full text not available from this repository.Abstract
We use the density functional theory in the local density approximation and norm-conserving pseudopotentials to calculate the valence band offset (VBO) at a ZnSe/ZnTe interlace grown in the (100) direction. The obtained VBO value of 1.09 eV is in excellent agreement with the corresponding experimental data and with other calculations.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | STRAINED-LAYER SUPERLATTICES; SEMICONDUCTOR INTERFACES; BRILLOUIN-ZONE; SPECIAL POINTS; HETEROJUNCTIONS; GAP; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:38 |
| URI: | https://pred.uni-regensburg.de/id/eprint/52737 |
Actions (login required)
 |
View Item |
