LANKES, S and STANZL, H and WOLF, K and GIEGLER, M and GEBHARDT, W (1995) EXCITON LINE BROADENING IN ZNSEXTE1-X/GAAS. JOURNAL OF PHYSICS-CONDENSED MATTER, 7 (7). pp. 1287-1292. ISSN 0953-8984,
Full text not available from this repository.Abstract
Photoreflection (PR) measurements on ZnSexTe1-x epilayers were performed in the concentration range x less than or equal to 0.5 and 0.9 < x. The dependence of the E(0) band gap on the composition leads to a bowing parameter of b = 1.37 +/- 0.03 eV. Additional photoluminescence (PL) measurements were used to investigate the localization energy of excitons caused by compositional fluctuations. It is shown that the large broadening of excitons in the PR spectra can be explained by localization effects.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CRYSTALS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:38 |
| URI: | https://pred.uni-regensburg.de/id/eprint/52743 |
Actions (login required)
 |
View Item |
