THE PRESSURE-DEPENDENCE OF THE INTRAIMPURITY ABSORPTION AND THE CHARGE-TRANSFER PROCESS OF ZNS-NI AND ZNSE-NI

SCHOTZ, GF and SEDLMEIER, W and LINDNER, M and GEBHARDT, W (1995) THE PRESSURE-DEPENDENCE OF THE INTRAIMPURITY ABSORPTION AND THE CHARGE-TRANSFER PROCESS OF ZNS-NI AND ZNSE-NI. JOURNAL OF PHYSICS-CONDENSED MATTER, 7 (4). pp. 795-802. ISSN 0953-8984,

Full text not available from this repository.

Abstract

The absorption spectra of ZnS:Ni and ZnSe:Ni were measured at 100 K under hydrostatic pressure up to 10 GPa. Two kinds of optical transition were investigated: (i) the d-d transitions between crystal field levels of Ni2+ in the tetrahedral held of the host lattice and (ii) a charge transfer band that occurs when an electron is transferred from the valence band to the Ni2+ ion. The pressure dependence of the crystal field parameter Dq and of the Racah parameter B were determined and a revised assignment of the d-d transitions was obtained. The charge transfer can be considered as a deep-acceptor transition. In this case the Ni acceptor level may be used as an energy reference, which enabled us to determine the hydrostatic deformation potential of the valence band.

Item Type: Article
Uncontrolled Keywords: HYDROSTATIC-PRESSURE; SEMICONDUCTORS; IMPURITIES; EDGE; PHOTOIONIZATION; TRANSITION; SPECTRA; NICKEL;
Depositing User: Dr. Gernot Deinzer
Last Modified: 19 Oct 2022 08:38
URI: https://pred.uni-regensburg.de/id/eprint/52791

Actions (login required)

View Item View Item