Shiogai, J. and Ciorga, M. and Utz, M. and Schuh, D. and Kohda, M. and Bougeard, D. and Nojima, T. and Weiss, D. and Nitta, J. (2015) In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current. APPLIED PHYSICS LETTERS, 106 (26): 262402. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga, Mn) As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga, Mn) As samples, the former is dominated by uniaxial anisotropy along the < 110 > axes. (C) 2015 AIP Publishing LLC.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ROOM-TEMPERATURE; SILICON; SPINTRONICS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 10 Jul 2019 13:01 |
| Last Modified: | 10 Jul 2019 13:01 |
| URI: | https://pred.uni-regensburg.de/id/eprint/5291 |
Actions (login required)
 |
View Item |
