GAIN PROCESSES IN ZNTE EPILAYERS ON GAAS

MAJUMDER, FA and KLINGSHIRN, C and WESTPHALING, R and KALT, H and NAUMOV, A and STANZL, H and GEBHARDT, W (1994) GAIN PROCESSES IN ZNTE EPILAYERS ON GAAS. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 186 (2). pp. 591-599. ISSN 0370-1972,

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Abstract

Optical gain processes in ZnTe epitaxial layers grown by MOVPE on GaAs substrates are reported. Depending on the excitation conditions, optical gain related to exciton-exciton scattering or due to recombination in an electron-hole plasma is identified by means of the variable-stripe-length method. The experimental gain spectra are compared to model calculations for the respective gain processes. Stimulated emission up to room temperature is observed under intense picosecond excitation.

Item Type:	Article
Uncontrolled Keywords:	DIRECT-GAP SEMICONDUCTORS; ELECTRON-HOLE PLASMA; OPTICAL-PROPERTIES; LAYERS; HETEROSTRUCTURES; EXCITATION; EXCITONS;
Depositing User:	Dr. Gernot Deinzer
Last Modified:	19 Oct 2022 08:39
URI:	https://pred.uni-regensburg.de/id/eprint/52960

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