GANICHEV, SD and DIENER, J and PRETTL, W (1994) DIRECT TUNNEL IONIZATION OF DEEP IMPURITIES IN THE ELECTRIC-FIELD OF FAR-INFRARED RADIATION. SOLID STATE COMMUNICATIONS, 92 (11). pp. 883-887. ISSN 0038-1098, 1879-2766
Full text not available from this repository.Abstract
Ionization of semiconductor deep impurity centers has been observed in the far infrared where photon energies are several factors of tall smaller than the binding energy of the impurities. It is shown that the ionization is caused at high intensities by direct tunnel ionization in the electric field of the high power radiation. This optical method allows the investigation of die tunnelling process at electric bias fields well below the threshold of avalanche breakdown.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GOLD ACCEPTOR; SILICON; IMPURITIES IN SEMICONDUCTORS; PHOTOCONDUCTIVITY AND PHOTOVOLTAIC; TUNNELING |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:39 |
| URI: | https://pred.uni-regensburg.de/id/eprint/52964 |
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