INTERMITTENT BREAKDOWN OF CURRENT-OSCILLATION TORI IN N-TYPE GAAS EPITAXIAL LAYERS

MARGULL, U and SPANGLER, J and PRETTL, W (1994) INTERMITTENT BREAKDOWN OF CURRENT-OSCILLATION TORI IN N-TYPE GAAS EPITAXIAL LAYERS. PHYSICAL REVIEW B, 50 (19). pp. 14166-14170. ISSN 0163-1829,

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Item Type: Article
Uncontrolled Keywords: NONLINEAR OSCILLATIONS; CHAOTIC FLUCTUATIONS; AVALANCHE BREAKDOWN; CURRENT FILAMENTS; II INTERMITTENCY; P-GERMANIUM; BEHAVIOR; GE; SEMICONDUCTORS; TRANSITION;
Depositing User: Dr. Gernot Deinzer
Last Modified: 19 Oct 2022 08:39
URI: https://pred.uni-regensburg.de/id/eprint/52974

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