AB-INITIO CALCULATION FOR MGTE AND TRANSITION OF MGXCD1-XTE FROM DIRECT TO INDIRECT SEMICONDUCTOR

FREYTAG, B (1994) AB-INITIO CALCULATION FOR MGTE AND TRANSITION OF MGXCD1-XTE FROM DIRECT TO INDIRECT SEMICONDUCTOR. JOURNAL OF PHYSICS-CONDENSED MATTER, 6 (46). pp. 9875-9880. ISSN 0953-8984, 1361-648X

Full text not available from this repository.

Abstract

The ternary mixed crystal system MgxCd1-xTe has recently attracted interest as a basic material for the blue laser diode. We use norm-conserving pseudopotentials in connection with the local-density approximation for ab initio calculations of the stable crystal structure and the lattice constant. Our results are in quantitative agreement with structural properties. The electronic band structure is calculated in dependence on the composition x of the system by the virtual-crystal approximation (VCA). We find a transition from direct to indirect energy gap for x = 0.7 in accordance with experimental data.

Item Type: Article
Uncontrolled Keywords: MOLECULAR-BEAM EPITAXY; ABINITIO CALCULATION; PSEUDOPOTENTIALS; ENERGIES; GROWTH; CDTE;
Depositing User: Dr. Gernot Deinzer
Last Modified: 19 Oct 2022 08:39
URI: https://pred.uni-regensburg.de/id/eprint/52977

Actions (login required)

View Item View Item