MAYER, H and STECKERMEIER, M and ROSSLER, U (1994) EXCITON-STATES AND SHALLOW ACCEPTORS IN STRAINED ZNTE. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 70 (3). pp. 335-345. ISSN 0141-8637,
Full text not available from this repository.Abstract
The valence band structure of zincblende semiconductors is known to cause a fine-structure of Coulomb states due to hole spin-orbit coupling. This fine-structure is modified by uniaxial strain e.g. in hetero-epitaxial layers or under external stress. We extend the theoretical concepts developed by Baldereschi and Lipari by including the strain effects and calculate the binding energies of shallow acceptors and excitons in ZnTe.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SPHERICAL MODEL; ZINC TELLURIDE; SEMICONDUCTORS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:40 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53124 |
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