SPECTRAL HOLE-BURNING ON SILICON PHTHALOCYANINES ISOLATED IN AN ARGON MATRIX

BRAUN, D and CEULEMANS, A and DICK, B and KONAMI, H (1994) SPECTRAL HOLE-BURNING ON SILICON PHTHALOCYANINES ISOLATED IN AN ARGON MATRIX. CHEMICAL PHYSICS LETTERS, 225 (4-6). pp. 398-403. ISSN 0009-2614,

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Abstract

Irradiation of the monomeric phthalocyanine HexSiO(SiPc)OSiHex3 isolated in an Ar matrix at T = 13 K with the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located about 700 cm-1 above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise determination of several excited-state vibrational frequencies. For dimeric Hex3SiO(SiPC-O-SiPc)OSiHex3 in the same matrix the changes in the absorption spectra after irradiation into the Q band reveal an out-of-plane polarization of the bands which are not present in the monomer absorption. This points to substantial charge-resonance contributions to the excitonic coupling between the two SiPc units in dimeric Hex3SiO(SiPc-O-SiPc)OSiHex3.

Item Type: Article
Uncontrolled Keywords: LINE-NARROWING SPECTROSCOPY; N-OCTANE CRYSTAL; POLARIZATION DETECTION; ABSORPTION-SPECTRA; AMORPHOUS SOLIDS; TRANSITION; MOLECULES; PORPHIN;
Depositing User: Dr. Gernot Deinzer
Last Modified: 19 Oct 2022 08:40
URI: https://pred.uni-regensburg.de/id/eprint/53146

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