LEIDERER, H and SILBERBAUER, M and BAUER, S and LIMMER, W and GEBHARDT, W (1994) THE ABSOLUTE EFFICIENCY OF RESONANT RAMAN-SCATTERING BY LONGITUDINAL OPTICAL PHONONS IN ZNTE NEAR THE E(0) GAP. JOURNAL OF PHYSICS-CONDENSED MATTER, 6 (30). pp. 6057-6065. ISSN 0953-8984,
Full text not available from this repository.Abstract
The absolute efficiency of resonant Raman scattering by longitudinal optical phonons is determined for an orientated ZnTe bulk crystal and single-crystalline ZnTe epilayers with incident photon energies near the E0 band gap at a temperature of 2 K. The ZnTe layers were grown by metal-organic vapour-phase epitaxy (MOVPE) on (001) GaAs and (001) GaSb, respectively, with a thickness of about 2 mum. Absolute values of the Raman scattering efficiency (RSE) have been determined in z(x, x)zBAR and z(y, x)zBAR backscattering configuration using a sample-substitution method and correcting the measured intensities with respect to absorption, reflection, and refraction. Measurements of the absorption coefficient and the reflectivity were performed on the same samples and at the same temperature. Well resolved maxima of the RSE appear at the m = 1 and m = 2 discrete energy levels of the band-gap exciton for incoming resonance and at the m = 1 level for outgoing resonance. Valence-band splitting due to residual biaxial strain in the ZnTe epilayers results in a splitting of the m = 1 resonance maximum for both incoming and outgoing resonance.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LAYERS; ABSORPTION; EXCITONS; FROHLICH; GAAS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:40 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53191 |
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