GANICHEV, SD and DIENER, J and PRETTL, W (1994) NONLINEAR FAR-INFRARED ABSORPTION IN INSB DUE TO LIGHT IMPACT IONIZATION. APPLIED PHYSICS LETTERS, 64 (15). pp. 1977-1979. ISSN 0003-6951, 1077-3118
Full text not available from this repository.Abstract
A highly nonlinear far-infrared free-carrier absorption, rising with the radiation intensity, has been observed in InSb. It is shown that the nonlinearity arises from an increase in the number of free carriers caused by the generation of electron-hole pairs by light impact ionization in the radiation field of a powerful far-infrared laser. The observed nonlinearity permits the investigation of the process of impact ionization by a contactless optical method.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRIC-FIELDS; SEMICONDUCTORS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:40 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53322 |
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