WOLF, K and NAUMOV, A and REISINGER, T and KASTNER, M and STANZL, H and KUHN, W and GEBHARDT, W (1994) LUMINESCENCE CAUSED BY EXTENDED LATTICE-DEFECTS IN EPITAXIALLY GROWN ZNTE LAYERS. JOURNAL OF CRYSTAL GROWTH, 135 (1-2). pp. 113-122. ISSN 0022-0248,
Full text not available from this repository.Abstract
Two strong emission bands (Y1 and Y2), 210 and 250 meV lower than E(gap) of ZnTe, have been studied in heteroepitaxially grown ZnTe layers. The phonon coupling and the thermalization energy of these emissions are unusually small, similar to those of the Y band in ZnSe and CdTe layers. The Y luminescence in ZnTe is emitted above all near the ZnTe/GaAs interface which contains a high density of lattice defects (mainly misfit dislocations). An increasing concentration of point defects leads to a strong decrease of the Y emission. The observation of this luminescence in ZnTe bulk material or in homoepitaxially grown ZnTe is not possible because of a strong dependence of the intensity on the defect concentration and the dislocation density. Both bands are excited only by laser light resonant to or higher than the free exciton energy. The strain dependent energy shift behaves similar to that of bound excitons. The intensity of the Y bands observed at liquid helium temperature decreases under strong laser excitation. A recovery effect of both lines is observed when the sample is heated to liquid nitrogen or room temperature.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | A-SI-H; PHOTOLUMINESCENCE; FATIGUE; CDTE; TEMPERATURE; ZNSE; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:41 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53558 |
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