GRUN, M and KLINGSHIRN, C and ROSENAUER, A and ZWECK, J and GEBHARDT, W (1993) SPATIAL CONFINEMENT OF MISFIT DISLOCATIONS AT THE INTERFACE OF CDSE/GAAS(111). APPLIED PHYSICS LETTERS, 63 (21). pp. 2947-2948. ISSN 0003-6951,
Full text not available from this repository.Abstract
High-resolution electron microscopy of wurtzite type CdSe epilayers grown on (111) GaAs revealed that interfacial misfit dislocations are perfect 60-degrees dislocations with Burgers vectors parallel to the interface. Glide is therefore limited to the (0001) interface plane and the extension of dislocations into the epilayer is suppressed. Single-beam bright field imaging shows that the 7% mismatched epilayer is free of a dislocation network in its volume.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LASER-DIODES; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53667 |
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