NAUMOV, A and STANZL, H and WOLF, K and LANKES, S and GEBHARDT, W (1993) EXCITON RECOMBINATION IN TE-RICH ZNSEXTE1-X EPILAYERS. JOURNAL OF APPLIED PHYSICS, 74 (10). pp. 6178-6185. ISSN 0021-8979,
Full text not available from this repository.Abstract
ZnSexTe1-x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0 < x < 0.4. The studied ZnSexTe1-x epilayers with thicknesses of about 1.5 mum were grown on GaAs substrates by metalorganic vapor phase epitaxy. It was found that the luminescence and reflectivity spectra of the mixed crystals are strongly affected by the compositional disorder. A continuous transition from the recombination through free and bound exciton states to the recombination of excitons localized by the compositional fluctuations of the mixed crystal was observed in the concentration region of about x = 0.25. The position of the excitonic band edge was derived from the photoluminescence excitation spectra and from temperature dependence of the emission spectra.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GROWN ZNTE LAYERS; ZNSE1-XTEX SOLID-SOLUTIONS; CHEMICAL VAPOR-DEPOSITION; BAND-GAP; ALLOYS; GAAS; PHOTOLUMINESCENCE; LOCALIZATION; REFLECTIVITY; TRANSITIONS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53678 |
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