Pechen, E. V. and Schoenberger, R. and Brunner, B. and Ritzinger, S. and Renk, Karl F. and Sidorov, M. V. and Oktyabrsky, S. R. (1993) Epitaxial growth of YBa2Cu3O7−δ films on oxidized silicon with yttria‐ and zirconia‐based buffer layers. JOURNAL OF APPLIED PHYSICS, 74 (5). pp. 3614-3616. ISSN 0021-8979, 1089-7550
Full text not available from this repository.Abstract
A study of epitaxial growth of YBa2Cu3O7-delta films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZ\Y2O3 double and YSZY2O3\YSZ triple layers allows the deposition of thin YBa2Cu3O7-delta films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-delta films grown on the double buffer layers a critical temperature T(c)(R=0)=89.5 K and critical current densities of 3.5 X 10(6) A/cm2 at 77 K and 1 X 10(7) A/cm2 at 66 K were reached.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | THIN-FILMS; SI |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Karl F. Renk |
| Depositing User: | Petra Gürster |
| Date Deposited: | 21 Sep 2023 06:12 |
| Last Modified: | 21 Sep 2023 06:12 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53803 |
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