NONPARABOLICITY IN THE CONDUCTION-BAND OF II-VI-SEMICONDUCTORS

MAYER, H and ROSSLER, U (1993) NONPARABOLICITY IN THE CONDUCTION-BAND OF II-VI-SEMICONDUCTORS. SOLID STATE COMMUNICATIONS, 87 (2). pp. 81-84. ISSN 0038-1098,

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Abstract

The details of the conduction band structure (spin-splitting, nonparabolicity, and warping) for the II-VI semiconductors ZnTe, ZnSe, and CdTe are studied using an effective 2 x 2 k.p (or ''envelon'') Hamiltonian, which contains terms up to fourth order in the electron momentum operator. On the basis of known parameter sets for the II-VI compounds we make predictions for the spin-splitting of the conduction band and the anisotropy and spin-splitting of cyclotron resonance. The magnitude of these effects is compared with those obtained for GaAs and InP.

Item Type: Article
Uncontrolled Keywords: NON-PARABOLICITY; GAAS; ANISOTROPY;
Depositing User: Dr. Gernot Deinzer
Last Modified: 19 Oct 2022 08:42
URI: https://pred.uni-regensburg.de/id/eprint/53908

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