RAMSTEINER, M and WAGNER, J and HIESINGER, P and KOHLER, K and ROSSLER, U (1993) RAMAN-SPECTROSCOPIC AND HALL-EFFECT ANALYSIS OF THE FREE-ELECTRON CONCENTRATION IN GAAS WITH ULTRAHIGH SILICON DOPING. JOURNAL OF APPLIED PHYSICS, 73 (10). pp. 5023-5026. ISSN 0021-8979,
Full text not available from this repository.Abstract
Heavily silicon-doped GaAs grown by molecular beam epitaxy has been studied by combined coupled plasmon-phonon mode Raman spectroscopy and Hall effect measurements. Free electron concentrations up to 2 X 10(19) cm-3 have been achieved with the dopant atoms being incorporated dominantly on Ga sites (> 90%) as measured by local vibrational mode Raman spectroscopy. To extract quantitative information from the plasmon-phonon Raman spectra, these spectra have been fitted using the temperature-dependent Lindhard-Mermin dielectric function including the nonparabolicity of the conduction band and wave vector nonconservation due to the absorption of the incident and scattered light. The excellent agreement found between Hall effect and Raman measurements demonstrates that consistent data on dopant incorporation and activation can be obtained, if band structure effects are accounted for appropriately in the analysis of the Raman spectra.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MOLECULAR-BEAM EPITAXY; CONDUCTION-BAND; MODES; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53959 |
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